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Apparatus surface conditioning effects in copper sulfide reactive sputtering for photovoltaic applications

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.571285· OSTI ID:5688555

The electrical requirements of the CdS/Cu/sub x/S solar cell place severe requirements on the Cu/sub x/S stoichiometry. While using Cu--Ar--H/sub 2/S cylindrical magnetron reactive sputtering to deposit coatings for use in CdS/Cu/sub x/S solar cells, we encountered film property variations which were traced to relatively long time constants (approx.100 min) for equilibration of the cathode and wall surfaces. This paper describes experiments in which equilibration times were determined for cases where: (a) cathode and wall surfaces were initially both in a ''clean'' fresh copper state, (b) cathode was in the clean state and walls were in the conditioned state, and (c) cathode was in the conditioned state and walls were in the clean state. The time constants were found to be determined primarily by the initial state of the cathode surface, the H/sub 2/S injection rate, and the discharge current. Heterojunctions with sputtered Cu/sub 2/S deposited after proper conditioning onto evaporated CdS and (CdZn)S have yielded short circuit currents approx.19 mA/cm/sup 2/ which are comparable to those obtained with copper sulfide deposited by the more conventional ion exchange processes. An efficiency of approx.7% has been achieved for a (CdZn)S/Cu/sub x/S cell with sputtered Cu/sub 2/S.

Research Organization:
Telic Corporation, 1631 Colorado Avenue, Santa Monica, California 90404
OSTI ID:
5688555
Journal Information:
J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 20:3; ISSN JVSTA
Country of Publication:
United States
Language:
English