Cadmium sulfide/copper sulfide heterojunction cell research. Final report, February 26, 1979-July 15, 1980

Technical Report · Mon Jun 30 00:00:00 EDT 1980

DOI:https://doi.org/10.2172/5066849· OSTI ID:5066849

Thornton, J. A.; Cornog, D. G.

Extensive modifications were made to the multi-source deposition apparatus. These include the installation of a larger vacuum chamber on the existing system. The new chamber provides improved inter-source shielding, an improved substrate mounting and heating system, and a vacuum interlock for introducing substrates. CdS resistivity control by both In doping and off-stoichiometric deposition has been investigated. Indium doping has been achieved both by diffusion from a pre-deposited In layer and by using In doped sputtering targets. Resistivities in the range 0.1 to 5 ..cap omega..-cm have been obtained for target doping levels of from 0.1 to 1 at. percent of In. These resistivities were found to be critically dependent on the H/sub 2/S injection rate, apparently because of compensation by Cd vacancies. Off-stoichiometry CdS coatings with solar-illuminated resistivities of about 10/sup 2/ ..cap omega..-cm have been deposited, using a cyclic reactive sputtering process were the H/sub 2/S injection is periodically switched on and off. The Cu/sub x/S deposition process was found to be sensitive to the period of cathode operation prior to coating deposition, probably because of the conditioning of cathode and shield surfaces. All-sputter-deposited Cd(Zn)S/Cu/sub 2/S cells, with Cd(Zn)S layers deposited using a Cd-0.10 Zn target doped with 2 atomic percent In, have yielded efficiencies of approx. 0.4%. All-sputtered cells with efficiencies of approx. 0.6% have been fabricated, using undoped CdS deposited by the pulse injection process. Efficiencies of approx. 1.2% have been achieved for cells with undoped sputter-deposited CdS and CuCl dry processed Cu/sub 2/S.

• Research Organization: TELIC Corp., Santa Monica, CA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5066849
• Report Number(s): SERI/TR-8033-2-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM SULFIDE SOLAR CELLS
FABRICATION
PERFORMANCE
CADMIUM SULFIDES
SPUTTERING
COATINGS
COPPER SULFIDES
CRYSTAL DOPING
DEPOSITION
ELECTRIC CONDUCTIVITY
EQUIPMENT
HYDROGEN SULFIDES
INDIUM
MAGNETRONS
MODIFICATIONS
OPTIMIZATION
RESEARCH PROGRAMS
SUBSTRATES
TEMPERATURE DEPENDENCE
CADMIUM COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
HYDROGEN COMPOUNDS
INORGANIC PHOSPHORS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture