Effect of uncontrolled impurities on electrical properties of GaAs films grown by molecular-beam epitaxy

Journal Article · Fri Aug 01 04:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:7034167

Dvoryankina, G G; Dvoryankin, V F; Kudryashov, A A; Petrov, A G; Shemet, V V; Varaksin, G A; Yassen, M L

According to previous studies, the principal uncontrolled impurities in GaAs layers grown by molecular-beam epitaxy (MBE) are C, Mn, Si, and Ge. In this work, results of investigations of the nature of some impurities in GaAs films, grown in a single-chamber equipment for MBE without any locks, are presented and their effect on the electrical properties of tin (approximately 1.0 micrometers and thinner) GaAs layers is shown. By Hall and chemical spectral analysis methods in undoped GaAs films, prepared by MBE, the impurities Mn, Ni, Co, and Cu are detected, which affect the concentration and mobility of the free current carriers in GaAs films, undoped and doped with tin. By means of layerwise chemical etching, the dependence of the electrophysical properties of n-GaAs films on their thickness is investigated. The effect of a buffer layer on this dependence is demonstrated.

• Research Organization: Institute of Radiotechnology and Electronics, Academy of Sciences of the USSR
• OSTI ID: 7034167
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:3; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CARRIER DENSITY
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HALL EFFECT
IMPURITIES
MANGANESE
MATERIALS
METALLURGICAL EFFECTS
METALS
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
THIN FILMS
TIN
TRANSITION ELEMENTS