Imperfections in vapor-phase epitaxial GaAs revealed by Sirtle etchant

Journal Article · Fri Apr 01 04:00:00 EST 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6050689

Sorokin, I N; Klebanova, N A; Kozeikin, B V; Nosikov, S V; Terent'eva, G N

The authors apply their studies of recombination, electrophysical, and structural properties of epitaxial films to determine the nature of imperfections revealed in gallium arsenide when it is treated with Sirtle etchant. They studied n-type epitaxial layers grown in the (100) orientation by vapor-phase epitaxy on heavily Te-doped and semiinsulating gallium arsenide substrates. With the aim of obtaining information on the nature of the defects, they carried out scanning electron microscopy using secondary emission; induced current and cathode luminescence techniques; transmission electron microscopy in the transmission regime; selective chemical etching combined with optical microscopy; and the measurement of basic electrophysical parameters of the epitaxial films. Imperfections revealed by Sirtle etchant as domelike etch figures are accumulations of impurity defects in thin layers of epitaxial films. These inhomogeneities may form because of impurity atoms gettering at the drains and may lower the concentration of inactive polluting impurities. They have shown that the observed imperfections are electrically active and make up regions of nonradiative recombination.

• Research Organization: Moscow Institute of Electronic Technology (USSR)
• OSTI ID: 6050689
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:11; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISPERSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON MOBILITY
ELEMENTS
EMISSION
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
LUMINESCENCE
METALLURGICAL EFFECTS
MICROSCOPY
MIXTURES
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
PROCESS SOLUTIONS
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
SECONDARY EMISSION
SEMIMETALS
SOLUTIONS
SPACE CHARGE
SURFACE FINISHING
TELLURIUM
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY