Structural ordering involving impurities in multilayer homoepitaxial structures subjected to low radiation doses

Journal Article · Tue Oct 01 04:00:00 EDT 1985 · Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States)

OSTI ID:5280881

Borkovskaia, O IU; Grusha, S A; Dmitruk, N L; Evstigneev, A M; Klebanova, N A

Electrophysical, photoelectric, electrooptic, and metallographic techniques are used to study radiation ordering in n(+)-n-n(++) GaAs multilayer homoepitaxial structures with metal contacts (Au, Sn, Cr, Pt). This ordering, which shows up as increased carrier mobility and lifetime, results from a decrease in the rate of nonradiative recombination, is most pronounced in thin n(+)-type surface layers, and occurs only in structurally imperfect materials with a high concentration of three-dimensional defects (domes). The experimental features of the radiation ordering effect indicate that penetrating radiation induces structural and impurity changes in the n(+)-type GaAs surface layer. It is suggested that the interaction between impurities and primary defects leads to the formation of neutral complexes. The enhancement of the ordering effect at the surface is attributed to planar gettering of defects during which the defects move along the surface. 19 references.

• Research Organization: Institut Poluprovodnikov, Kiev, Ukrainian SSR
• OSTI ID: 5280881
• Journal Information: Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States) Vol. 30; ISSN SPTPA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
MATERIALS
MICROSTRUCTURE
N-TYPE CONDUCTORS
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
THIN FILMS