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Metallographic investigation of structural defects in A/sup III/B/sup V/ semiconducting compounds

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7193053
In this article we give the results of a metallographic investigation of the surface layers of InSb and InAs in order to elucidate the main types and characteristics of the defects in the active region of surface-barrier devices. Structural defects in the surfaces of InSb and InAs, which influence the electrophysical characteristics of the MOS structures, can provisionally by attributed to packing defects and clusters of Frenkel defects. Physiocochemical action on the semiconductor may lead to a change in the pattern of revealed defects.
Research Organization:
Tomsk State Univ. (USSR)
OSTI ID:
7193053
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:9; ISSN INOMA
Country of Publication:
United States
Language:
English