Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure

Journal Article · Mon Jan 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618010256· OSTI ID:22756183

Zhukov, N. D. ^[1]; Kabanov, V. F.; Mihaylov, A. I. ^[2]; Mosiyash, D. S. ^[1]; Hazanov, A. A. ^[1]; Shishkin, M. I. ^[2]

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1. OOO Volga-Svet (Russian Federation)
2. Saratov State University (Russian Federation)

The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.

• OSTI ID: 22756183
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON EMISSION
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
NUCLEAR MAGNETIC RESONANCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS