Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

Journal Article · Sun Apr 15 04:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018040284· OSTI ID:22786475

Zhukov, N. D.; Rokakh, A. G. ^[1]

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1. Saratov State University (Russian Federation)

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

• OSTI ID: 22786475
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 4 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
DIAMONDS
ELECTRODEPOSITION
EXCITATION
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERACTIONS
LAYERS
LEAD SULFIDES
NANOPARTICLES
PLASMA
QUANTIZATION
QUANTUM DOTS
REFLECTION
RESONANCE
SEMICONDUCTOR MATERIALS
SPECTRA