Structural and optical properties of homoepitaxial GaN layers
- Univ. of Warsaw (Poland). Inst. of Experimental Physics
- Lawrence Berkeley National Lab., CA (United States). Centre for Advanced Materials
- Univ. of Warsaw (Poland). Inst. of Experimental Physics; and others
The review of structural and optical properties of homoepitaxial layers grown by MOCVD on single crystals GaN substrates is presented. The TEM technique is used to characterize the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] smooth surface. On the other hand the layers grown on the [0001] rough surface are free from vertical defects. The characteristic feature of the growth on the rough surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 581053
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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