Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE
- CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)
- Department of Applied Physics, Delhi Technological University, Delhi 110042 (India)
- Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India)
We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.
- OSTI ID:
- 22591114
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1724; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and optical properties of homoepitaxial GaN layers
Structural defects in heteroepitaxial and homoepitaxial GaN
Related Subjects
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
ETCHING
GALLIUM NITRIDES
GRAIN SIZE
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
ORGANOMETALLIC COMPOUNDS
POLYCRYSTALS
PRESSURE RANGE MICRO PA
PRESSURE RANGE MILLI PA
ROUGHNESS
SAPPHIRE
SUBSTRATES
SURFACES
THIN FILMS