Effect of ion-implantation doping and heat treatment of the structural properties of GaAs epitaxial layers

Journal Article · Fri Jul 01 04:00:00 EDT 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6086396

Sorokin, I N; Klebanova, N A; Avramenko, N N; Terent'eva, G N; Nosikov, S V; Chernyaev, A V; Rodina, A S

We attempted to reveal electrically active defects of the cluster type in ion-doped films by means of selective chemical etching and to consider the influence of heat treatment on the generation and decay of these imperfections in implanted and epitaxial layers of gallium arsenide. Doping of gallium arsenide by means of ion implantation is observed to generate clusters of radiation defects, whose density reaches 10/sup 7/ cm/sup -2/. Heat treatment of both ion-implanted and epitaxial layers at 700/sup 0/C causes the clusters to decay and the carrier concentration to rise. We have discovered a correlation between the dependences of the defect density and the majority-carrier concentration at an annealing temperature of 650/sup 0/C, confirming the nature of the imperfections observed: inhomogeneities - revealed by a Spirtle solution in the form of cupola-shaped etch figures - consisting of clusters of point defects formed by gettering of impurity ions on vacancy clusters.

• Research Organization: Moscow Institute of Electronic Engineering (USSR)
• OSTI ID: 6086396
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:2; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
360605 -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER MOBILITY
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON CHANNELING
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GETTERING
HEAT TREATMENTS
ION IMPLANTATION
IONS
IRRADIATION
JUNCTIONS
MATERIALS
METALLURGICAL EFFECTS
METALS
MICROSCOPY
MOBILITY
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TEMPERATURE EFFECTS
VAPOR PHASE EPITAXY
ZINC
ZINC IONS