Photoluminescence of GaAs films grown by vacuum chemical epitaxy

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341859· OSTI ID:7077851

Bernussi, A A; Barreto, C L; Carvalho, M M.G.; Motisuke, P

GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750 /sup 0/C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

• Research Organization: DFESCM, IFGW, UNICAMP, 13081-Campinas-S.P.,-Brasil
• OSTI ID: 7077851
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LAYERS
LUMINESCENCE
MATERIALS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PNICTIDES
RADIATIONS
SEMICONDUCTOR MATERIALS
ULTRALOW TEMPERATURE
VACUUM SYSTEMS