High-efficiency GaAs solar cells grown by molecular-beam epitaxy

Journal Article · Thu Mar 01 04:00:00 EST 1990 · Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA)

DOI:https://doi.org/10.1116/1.585031· OSTI ID:6842364

Melloch, M R ^[1]; Tobin, S P ^[2]; Stellwag, T B ^[1]; Bajgar, C ^[2]; Keshavarzi, A; Lundstrom, M S ^[1]; Emery, K ^[3]

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1. School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (USA)
2. Spire Corporation, Patriots Park, Bedford, Massachusetts 01730 (USA)
3. Solar Energy Research Institute, Golden, Colorado 80401 (USA)

Previously, solar cells fabricated from molecular-beam epitaxually (MBE)-grown material have been inferior in performance to those fabricated from metalorganic chemical vapor deposited (MOCVD) material. We have obtained 1-sun air mass (AM) 1.5 efficiencies of 23.8% for 0.25 cm{sup 2} GaAs solar cells fabricated on MBE-grown material. This is the first solar cell fabricated on MBE material which is of comparable performance to solar cells fabricated on MOCVD material. Details of the MBE system preparation and film growth procedure along with a detailed evaluation of the solar cells will be presented.

• OSTI ID: 6842364
• Journal Information: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Journal Name: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA) Vol. 8:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
FABRICATION
FURNACES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SAMPLE PREPARATION
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE CONTROL