Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxy

Journal Article · Thu Nov 15 04:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90943· OSTI ID:5886212

Fan, J C.C.; Calawa, A R; Chapman, R L; Turner, G W

Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow-homojunction n/sup +//p/p/sup +/ structure without a GaAlAs window. The n/sup +/, p, and p/sup +/ GaAs layers were all grown by MBE on single-crystal p/sup +/ GaAs substrates. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n/sup +/ layer. These cells are the first efficient MBE solar cells of any type to be reported.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5886212
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL REACTIONS
COATINGS
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRODEPOSITION
ELECTROLYSIS
ELECTROPLATING
EPITAXY
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LAYERS
LYSIS
MOLECULAR BEAMS
MONOCRYSTALS
N-TYPE CONDUCTORS
OXIDATION
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATING
PNICTIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SURFACE COATING