Efficient AlGaAs shallow-homojunction solar cells

Journal Article · Thu Mar 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94859· OSTI ID:5162956

Gale, R P; Fan, J C.C.; Turner, G W; Chapman, R L; Pantano, J V

Shallow-homojunction n/sup +//p/p/sup +/ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9% have been fabricated in Al/sub 0.2/Ga/sub 0.8/As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n/sup +/ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 5162956
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOMOJUNCTIONS
JUNCTIONS
LAYERS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDATION
P-N JUNCTIONS
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THICKNESS
VAPOR DEPOSITED COATINGS