A1GaAs shallow-homojunction solar cells for tandem applications

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5902998

Gale, R P; Chapman, R L; Fan, J C.C.; Pantano, J V; Turner, G W

Shallow-homojunction n/sup +//p/p/sup +/ solar cells with one-sun, AM1 conversion efficiencies over 16% have been fabricated in A1 /SUB 0.3/ Ga /SUB 0.7/ As layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n/sup +/ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies are the highest reported for any A1GaAs cells. The application of these results to A1GaAs/Si tandem cells is discussed.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
• OSTI ID: 5902998
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
ARSENIC COMPOUNDS
ARSENIDES
CASCADE SOLAR CELLS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOMOJUNCTIONS
JUNCTIONS
MONOCRYSTALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING