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High-efficiency double-heterostructure AlGaAs/GaAs solar cells

Technical Report ·
OSTI ID:5413292
; ; ;
Double-heterostructure solar cells were fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p+ and n+ A1GaAs layers. The best cell, which incorporates an abrupt A1GaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23%. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.
Research Organization:
Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
OSTI ID:
5413292
Report Number(s):
AD-A-167415/9/XAB; MS-6970
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
HETEROJUNCTIONS
JUNCTIONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING