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GaAsP shallow-homojunction solar cells for tandem applications

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6026407
The authors have fabricated GaAs /SUB 0.75/ P /SUB 0.25/ solar cells using a shallow-homojunction n/sup +//p/p/sup +/ structure, without a window layer, grown by AsCl/sub 3/-PCl/sub 3/-GaAs-H/sub 2/ chemical vapor deposition on GaAs substrates. Because of the lattice mismatch between GaAs /SUB 0.75/ P /SUB 0.25/ and GaAs, step-graded layers of GaAsP are used to reduce the density of misfit dislocations in the active region. The step-grading technique increases the open-circuit voltage at one sun from about 0.95 to 1.17 V, the highest value obtained for GaAsP solar cells. A one-sun conversion efficiency of close to 15% at AM1 has been obtained for cells with an anodic antireflection coating. GaAs /SUB 0.75/ P /SUB 0.25/ cells, which have an energy gap of 1.70 eV, are being developed for use as the upper cell in twojunction monolithic or stacked tandem structures.
Research Organization:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
OSTI ID:
6026407
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English