GaAsP shallow-homojunction solar cells for tandem applications
Conference
·
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6026407
The authors have fabricated GaAs /SUB 0.75/ P /SUB 0.25/ solar cells using a shallow-homojunction n/sup +//p/p/sup +/ structure, without a window layer, grown by AsCl/sub 3/-PCl/sub 3/-GaAs-H/sub 2/ chemical vapor deposition on GaAs substrates. Because of the lattice mismatch between GaAs /SUB 0.75/ P /SUB 0.25/ and GaAs, step-graded layers of GaAsP are used to reduce the density of misfit dislocations in the active region. The step-grading technique increases the open-circuit voltage at one sun from about 0.95 to 1.17 V, the highest value obtained for GaAsP solar cells. A one-sun conversion efficiency of close to 15% at AM1 has been obtained for cells with an anodic antireflection coating. GaAs /SUB 0.75/ P /SUB 0.25/ cells, which have an energy gap of 1.70 eV, are being developed for use as the upper cell in twojunction monolithic or stacked tandem structures.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
- OSTI ID:
- 6026407
- Report Number(s):
- CONF-840561-
- Conference Information:
- Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
ARSENIC CHLORIDES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRADED BAND GAPS
HALIDES
HALOGEN COMPOUNDS
HOMOJUNCTIONS
HYDROGEN COMPOUNDS
JUNCTIONS
LINE DEFECTS
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS CHLORIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
ARSENIC CHLORIDES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRADED BAND GAPS
HALIDES
HALOGEN COMPOUNDS
HOMOJUNCTIONS
HYDROGEN COMPOUNDS
JUNCTIONS
LINE DEFECTS
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS CHLORIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING