Shallow-homojunction solar cells
Patent
·
OSTI ID:6853519
Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow -homojunction solar cells have a n+/p/p+ structure in which the n+ top layer is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
- Assignee:
- Massachusetts Institute Of Technology
- Patent Number(s):
- US 4227941
- OSTI ID:
- 6853519
- Country of Publication:
- United States
- Language:
- English
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