Junction formation in GaAs shallow-homojunction solar cells by the use of spin-on diffusion sources

Conference · Wed Sep 01 04:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5489871

Turner, G W; Connors, M K; Davis, F M; Fan, J C.C.; Gale, R P; Tsaur, B Y

Diffusion from a spin-on source has been used to form the n/sup +/ layer in GaAs shallow-homojunction n/sup +//p/p/sup +/ solar cells. This is the first time diffusion has been employed in the fabrication of such cells. Conversion efficiencies as high as about 14% (AM1) have been obtained for small (0.093 cm/sup 2/) test cells with an anodic antireflection coating. The operating characteristics of these cells show that high-quality shallow n/sup +//p junctions can be prepared in GaAs by spin-on diffusion.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
• OSTI ID: 5489871
• Report Number(s): CONF-820906-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANODES
ANTIREFLECTION COATINGS
COATINGS
CONTROL
DEPOSITION
DIFFUSION COATING
DIRECT ENERGY CONVERTERS
ELECTRODES
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
JUNCTIONS
LAYERS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
QUALITY CONTROL
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPIN-ON COATING
SPIN-ON COATINGS
SURFACE COATING