GaAs shallow-homojunction solar cells on Ge-coated Si substrates

Journal Article · Wed Jul 01 04:00:00 EDT 1981 · Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/EDL.1981.25386· OSTI ID:5560424

Gale, R P; Fan, J C.C.; Tsaur, B Y; Turner, G W; Davis, F M

Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize in n/sup +//p/p/sup +/ shallow-homojunction GaAs structure on a thin (/LT AN BR/0.2/mu/m/RT AN BR/) epitaxial Ge layer. These solar cells are the first reported GaAs devices fabricated on Si substrates. 11 refs.

• Research Organization: MIT, Lexington, Mass
• OSTI ID: 5560424
• Journal Information: Electron Device Lett.; (United States), Journal Name: Electron Device Lett.; (United States) Vol. EDL-2:7; ISSN EDLED
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EPITAXY
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
HOMOJUNCTIONS
JUNCTIONS
METALS
MONOCRYSTALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING