GaAs/Ge/Si solar cells

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5903048

Tsaur, B Y; Fan, J C.C.; King, B D; McClelland, R W; Metze, G M; Turner, G W

Shallow-homojunction GaAs solar cells fabricated on Ge-coated Si substrates have achieved conversion efficiencies of 14 and 11% (AM1, one sun) for areas of about 0.093 and 0.51 cm/sup 2/, respectively. The electrical characteristics of the cells have been studied by quantum efficiency, junction diode factor and dark current measurements, and their structural properties by transmission electron microscopy and electron-beaminduced-current imaging. The effects of dislocations, which are the predominant defects in the GaAs layers, on solar cell performance are discussed. Recent advances in monolithic GaAs-Si tandem cells are also reported.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
• OSTI ID: 5903048
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
ENERGY CONVERSION
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
HOMOJUNCTIONS
JUNCTIONS
LINE DEFECTS
MECHANICS
METALS
MICROSCOPY
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC CONVERSION
PHYSICAL PROPERTIES
QUANTUM MECHANICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
TRANSMISSION ELECTRON MICROSCOPY