High-efficiency, thin-film and multijunction solar cells. Final report, 1982

Technical Report · Thu Nov 01 04:00:00 EST 1984

DOI:https://doi.org/10.2172/6086260· OSTI ID:6086260

Fan, J. C.C.

This report presents results of research conducted on multijunction and thin-film solar cells. Epitaxial GaAs layers with a reduced dislocation density have been grown on Ge-coated Si substrates by using a new technique involving multiple growth interrupts and thermal cycles. The open-circuit voltage of shallow-homojunction solar cells fabricated in these GaAs layers was found to increase with the number of interrupts and thermal cycles. Small-area cells with conversion efficiencies up to 14% (AM1) have been obtained. In addition, monolithic tandem cells composed of a GaAs top cell and a Si bottom cell that are connected by a thin epitaxial Ge layer have been fabricated.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6086260
• Report Number(s): SERI/STR-211-2466; ON: DE85002922
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CASCADE SOLAR CELLS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
LINE DEFECTS
METALS
MORPHOLOGY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS