Ion-implanted laser-annealed GaAs solar cells

Journal Article · Fri Jun 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90671· OSTI ID:6346147

Fan, J C.C.; Chapman, R L; Donnelly, J P; Turner, G W; Bozler, C O

Conversion efficiencies up to 12% at AM1 have been obtained for ion-implanted laser-annealed (IILA) GaAs solar cells utilizing a shallow-homojunction n/sup +//p/p/sup +/ structure without a GaAlAs window. The n/sup +/ layer was formed by Se/sup +/-ion implantation into the p layer, which was grown epitaxially by chemical vapor deposition on a single-crystal p/sup +/ substrate. The implanted layer was annealed, without encapsulation, by scanning with a cw Nd : YAG laser. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n/sup +/ layer.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 6346147
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM COMPOUNDS
ANNEALING
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COATINGS
CONVERSION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRODEPOSITION
ELECTROLYSIS
ELECTROMAGNETIC RADIATION
ELECTROPLATING
ENERGY CONVERSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GARNETS
HEAT TREATMENTS
ION IMPLANTATION
IONS
JUNCTIONS
LASER RADIATION
LASERS
LYSIS
MINERALS
NEODYMIUM LASERS
OXIDATION
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATING
PNICTIDES
RADIATIONS
SELENIUM IONS
SILICATES
SILICON COMPOUNDS
SOLAR CELLS
SOLID STATE LASERS
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS