Pulsed laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells

Journal Article · Mon Jun 01 04:00:00 EDT 1981 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6638289

Lowndes, D H; Cleland, J W; Fletcher, J; Narayan, J; Westbrook, R D; Wood, R F; Christie, W H; Eby, R E

The results of a study whose purpose was to evaluate the combination of ion implantation followed by pulsed ruby laser annealing (II/PLA), as a method for shallow p-n junction formation in semiconducting GaAs substrates, are reported. High dose Zn, Mg, Si and se implants were used. PLA was carried out in air without encapsulation, and with thin sputtered SiO/sub 2/ encapsulation layers. The combination of I-V, C-V, SEM, TEM and SIMS measurements that were carried out have important implications for photovoltaic applications including the possibility of forming planar junctions, the choice of implanted ions to obtain high electrical activation, the optimum pulsed laser energy density range, the resultant junction depth and electrical characteristics, and the presence of laser- and implantation-induced residual defects.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6638289
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALKALINE EARTH METALS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENCAPSULATION
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HEATING
HOMOJUNCTIONS
ION IMPLANTATION
JUNCTIONS
LASER-RADIATION HEATING
LASERS
MAGNESIUM
METALS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
RUBY LASERS
SELENIUM
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SHEETS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLAR CELLS
SOLAR EQUIPMENT
SOLID STATE LASERS
ZINC