Pulsed-laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells

Conference · Fri May 01 04:00:00 EDT 1981

OSTI ID:6518424

Lowndes, D H; Cleland, J W; Fletcher, J; Narayan, J; Westbrook, R D; Wood, R F; Christie, W H; Eby, R E

The results of a study whose purpose was to evaluate the combination of ion implantation followed by pulsed ruby laser annealing (11/PLA), as semiconducting GaAs substrates, are reported. High dose Zn, Mg, Si, and Se implants were used. PLA was carried out in air without encapsulation, and with thin sputtered SiO/sub 2/ encapsulation layers. The combination of I-V, C-V, scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy measurements that were carried out have important implications for photovoltaic applications including the possibility of forming planar junctions, the choice of implanted ions to obtain high electrical activation, the optimum pulsed laser energy density range, the resultant junction depth and electrical characteristics, and the presence of laser-and implantation-induced residual defects.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6518424
• Report Number(s): CONF-810526-28(Draft)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALINE EARTH METALS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL ANALYSIS
CRYSTAL DOPING
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
JUNCTIONS
LASERS
MAGNESIUM
MASS SPECTROSCOPY
METALS
MICROANALYSIS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
P-N JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SELENIUM
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
ZINC