Photoluminescence of pulsed ruby laser annealed crystalline and ion implanted GaAs

Conference · Sun Nov 01 04:00:00 EST 1981

OSTI ID:5888716

Lowndes, D H; Feldman, B J

In an effort to understand the origin of defects earlier found to be present in p-n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n- and p-type GaAs, for laser energy densities 0 less than or equal to E/sub l/ less than or equal to 0.6 J/cm/sup 2/. It is found that PLA of c-GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing E/sub l/. The variation of PL intensity with E/sub l/ is found to be different for n- and p-type material. No PL is observed from high dose (1 or 5 x 10/sup 15/ ions/cm/sup 2/) Si- or Zn- implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5888716
• Report Number(s): CONF-811122-31(Draft); ON: DE82004116
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360605 -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPLANTS
ION IMPLANTATION
JUNCTIONS
LASERS
LUMINESCENCE
MATERIALS
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS