Photoluminescence of pulsed laser irradiated n- and p-GaAs

Journal Article · Fri Jan 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92924· OSTI ID:5936417

Feldman, B J; Lowndes, D H

We report a photoluminescence study of pulsed ruby laser irradiated crystalline and ion implanted GaAs, which supports the following conclusions: (1) pulsed laser irradiation of crystalline GaAs alters both the intensity and the spectrum of photoluminescence, corresponding to an increase in nonradiative recombination centers present in the material; (2) the variation of luminescent intensity with laser energy density is different for n- and p-type materials; (3) no luminescence is detected in high dose ion implanted GaAs, either before or after laser annealing.

• Research Organization: Department of Physics, University of Missouri, St. Louis, Missouri 63121
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5936417
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTALS
DATA
ELECTROMAGNETIC RADIATION
ENERGY DENSITY
ENERGY DEPENDENCE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPLANTS
INFORMATION
ION IMPLANTATION
IONS
LASER RADIATION
LASERS
LUMINESCENCE
MATERIALS
N-TYPE CONDUCTORS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PNICTIDES
PULSES
RADIATIONS
RECOMBINATION
RUBY LASERS
SEMICONDUCTOR MATERIALS
SILICON IONS
SOLID STATE LASERS
SPECTRA
ZINC IONS