Recovery of range-zone luminescence by pulsed laser annealing in Cd/sup +/-implanted GaAs
Journal Article
·
· Appl. Phys. Lett.; (United States)
The effects of 300-K implantation of 200-keV Cd/sup +/ ions and subsequent pulsed laser annealing in GaAs were investigated by means of depth-resolved cathodoluminescence at 80 K. We found that lattice order could be restored sufficiently to increase the implanation-quenched luminescence by 2--3 orders of magnitude with either ruby or Nd:glass lasers. Thus the luminescence is recovered to within an order of magnitude of that in unimplanted material.
- Research Organization:
- Sandia National Laboratory, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6325090
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GLASS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
KEV RANGE
LASER-RADIATION HEATING
LASERS
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
NEODYMIUM LASERS
PLASMA HEATING
PNICTIDES
PULSES
RUBY LASERS
SCINTILLATION QUENCHING
SOLID STATE LASERS
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GLASS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
KEV RANGE
LASER-RADIATION HEATING
LASERS
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
NEODYMIUM LASERS
PLASMA HEATING
PNICTIDES
PULSES
RUBY LASERS
SCINTILLATION QUENCHING
SOLID STATE LASERS