Halogen and mercury lamp annealing of Cd-Implanted GaAs

Journal Article · Wed Nov 01 04:00:00 EST 1989 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2096469· OSTI ID:7203067

Yokota, K; Kimura, M; Nakanishi, H; Tamura, S ^[1]; Ishihara, S; Kimura, I ^[2]

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1. Faculty of Engineering, Kansai Univ., Suita, Osaka 564 (JP)
2. Research Reactor Institute, Kyoto Univ., Kumatori, Sennan, Osaka 590-04 (JP)

This paper reports capless annealing of Cd-implanted GaAs performed using a halogen and a mercury lamp, which emit infrared and ultraviolet rays, respectively. Sheet carrier concentrations depended on annealing time and the lamps. At the beginning of annealing, the implanted Cd was lost to a greater extent on the samples annealed by the mercury lamp than on the samples annealed by the halogen lamp. GaAs surfaces decomposed during prolonged annealing using both lamps. The carrier concentration with annealing was suppressed by the thermal decomposition of GaAs.

• OSTI ID: 7203067
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 136:11; ISSN 0013-4651; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
656001 -- Condensed Matter Physics-- Solid-State Plasma
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAM-PLASMA SYSTEMS
CADMIUM ADDITIONS
CADMIUM ALLOYS
CARRIER DENSITY
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
HEAT TREATMENTS
INFRARED RADIATION
ION IMPLANTATION
MERCURY
METALS
NONMETALS
PNICTIDES
RADIATIONS
SHEETS
THERMAL DEGRADATION
ULTRAVIOLET RADIATION