Deep levels in ion-implanted GaAs (gallium arsenide). Final report, 1 June-1 October 1985

Technical Report · Thu Jan 23 04:00:00 EST 1986

OSTI ID:6603889

Dietrich, H B; Magno, R

In summary, DLTS measurements have not found any majority-carrier traps with a concentration greater than 1 x 10/sup 13//cm/sup 3/ after annealing an implanted sample at 850 C. The implanted and annealed samples were found to have the same minority-carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.

• Research Organization: Naval Research Lab., Washington, DC (USA)
• OSTI ID: 6603889
• Report Number(s): AD-A-177072/6/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
PNICTIDES
RADIATIONS
SAMPLING
SPECTROSCOPY
SURFACES
THERMAL RADIATION
TRAPS