Capless annealing of ion-implanted GaAs

Journal Article · Thu Jul 15 04:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.88981· OSTI ID:7188017

Immorlica, A A; Eisen, F H

A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET's fabricated from this material. (AIP)

• Research Organization: Science Center, Rockwell International, Thousand Oaks, California 91360
• OSTI ID: 7188017
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
LUMINESCENCE
PERFORMANCE
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SELENIUM IONS
SEMICONDUCTOR DEVICES
TRANSISTORS