Capless anneal of ion-implanted GaAs in controlled arsenic vapor

Journal Article · Mon Jan 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325649· OSTI ID:6510788

Kasahara, J; Arai, M; Watanabe, N

GaAs wafers were implanted with sulfur or silicon ions and annealed at temperatures from 800 to 950 /sup 0/C under arsenic partial pressure controlled by arsine (AsH/sub 3/) flow. Electrical characteristics obtained in this method were nearly identical or superior to those obtained with dielectric films. No sign of surface deterioration was observed even after annealing at 950 /sup 0/C. The implantation into a Cr-doped epitaxial layer resulted in better characteristics than into semi-insulating substrates from a vender. The best doping efficiency of 89% was obtained with a dose of 1 x 10/sup 13/ Si/sup +//cm/sup 2/. The method is simple and reproducible, and suitable for the annealing process in production.

• Research Organization: Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, Japan
• OSTI ID: 6510788
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
CRYSTAL DOPING
DEPTH DOSE DISTRIBUTIONS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
ION IMPLANTATION
IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PRESSURE DEPENDENCE
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SILICON IONS
SPATIAL DOSE DISTRIBUTIONS
SULFUR IONS