Cathodoluminescence studies of postrange defect introduction from ion implantation in CdSe

Journal Article · Thu Jul 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331395· OSTI ID:5320577

Norris, C B

Cathodoluminescence measurements in conjunction with layer removal by chemical etching show that shallow 200-keV Xe/sup +/ ion implantations cause significant postrange defect introduction in CdSe. Strong spectral changes are present at depths an order of magnitude beyond the calculated projected ion range (approx.500 A). There is significant residual damage at depths greater than a micron in some instances. Implantation at 80 K yields deeper and more severe 300- K stable postrange defect introduction than does implantation at 300 K. One component of the postrange damage enhances nonradiative (<1 eV) recombination. The introduction of, or increased prominence in, deep-center luminescence near 1.4 eV is tentatively associated with cadmium vacancy (V/sub Cd/) introduction in the postrange zone. The simultaneous strong growth in the prominence of luminescence near 1.7 eV is explained by the novel interpretation that incumbent interstitial alkali impurities (Na, Li) are reacting with ion-implantation-induced V/sub Cd/ to enhance the substitutional alkali concentration in the postrange zone. There is no evidence, though, that Cd interstitials from the range-zone implant damage are a significant component of the postrange damage.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5320577
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ETCHING
EXPERIMENTAL DATA
INFORMATION
INTERSTITIALS
ION IMPLANTATION
IONS
LAYERS
LOW TEMPERATURE
LUMINESCENCE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
NUMERICAL DATA
POINT DEFECTS
RANGE
RECOMBINATION
SELENIDES
SELENIUM COMPOUNDS
STABILITY
SURFACE FINISHING
VACANCIES
XENON IONS