TEM studies of defects in laser annealed gallium arsenide
Conference
·
OSTI ID:6627458
The nature and depth distribution of residual damage in ion implanted and pulsed laser annealed GaAs have been studied using both plan-view and cross-section transmission electron microscopy (TEM) specimens for high dose implants (5.0 x 10/sup 15/ cm/sup -2/; Zn/sup +/, Se/sup +/, Mg/sup +/, Si/sup +/). For laser annealing of unencapsulated GaAs, the surface of the GaAs was degraded. The use of thin (approx. 300 to 500 A) layers of SiO/sub 2/ for encapsulation was found to substantially reduce this surface degradation.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6627458
- Report Number(s):
- CONF-810446-2(Draft)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Pulsed laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells
Pulsed-laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells
Controlled atmosphere annealing of ion implanted gallium arsenide. Final report 1 Jul 76-30 Nov 79
Journal Article
·
Mon Jun 01 00:00:00 EDT 1981
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:6638289
Pulsed-laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells
Conference
·
Fri May 01 00:00:00 EDT 1981
·
OSTI ID:6518424
Controlled atmosphere annealing of ion implanted gallium arsenide. Final report 1 Jul 76-30 Nov 79
Technical Report
·
Fri Aug 01 00:00:00 EDT 1980
·
OSTI ID:6583379
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LASER-RADIATION HEATING
MAGNESIUM IONS
PHYSICAL RADIATION EFFECTS
PLASMA HEATING
PNICTIDES
RADIATION EFFECTS
SELENIUM IONS
SILICON IONS
ZINC IONS
360605* -- Materials-- Radiation Effects
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LASER-RADIATION HEATING
MAGNESIUM IONS
PHYSICAL RADIATION EFFECTS
PLASMA HEATING
PNICTIDES
RADIATION EFFECTS
SELENIUM IONS
SILICON IONS
ZINC IONS