Controlled atmosphere annealing of ion implanted gallium arsenide. Final report 1 Jul 76-30 Nov 79

Technical Report · Fri Aug 01 04:00:00 EDT 1980

OSTI ID:6583379

Anderson, C L; Eu, V; Feng, M; Henderson, W B; Kim, H B

Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing.

• Research Organization: Hughes Aircraft Co., Torrance, CA (USA). Torrance Research Center
• OSTI ID: 6583379
• Report Number(s): AD-B-053732/4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATMOSPHERES
CONTROLLED ATMOSPHERES
DAMAGE
DIFFUSION
ELEMENTS
ENCAPSULATION
EROSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN
IMPURITIES
ION IMPLANTATION
LAYERS
NONMETALS
PNICTIDES
PRODUCTION
RECOVERY
SURFACES