Effect of oxygen on chromium-structural defects interaction in ion-implanted gallium arsenide

Journal Article · Wed Sep 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331514· OSTI ID:5077974

Sadana, D K; Washburn, J; Zee, T; Wilson, R G

The redistribution of chromium in gallium arsenide implanted with either gallium and arsenic or gallium, arsenic, and oxygen and subsequently furnace annealed was studied by secondary ion mass spectrometry. The depth distribution of the residual damage was obtained by cross-sectional transmission electron microscopy. At annealing temperatures of < or =600 /sup 0/C, there was a one to one depth correlation between the positions of the damage layers and peaks in the atomic profile of chromium. However, at annealing temperatures of > or =800 /sup 0/C such correlations were complicated by oxidation effects.

• Research Organization: University of California, Lawrence Berkeley Laboratory, Materials and Molecular Research Division, Berkeley, California 94720
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 5077974
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIC IONS
ARSENIDES
CHARGED PARTICLES
CHEMICAL REACTIONS
CHROMIUM
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DISTRIBUTION
ELECTRON MICROSCOPY
ELEMENTS
FURNACES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM IONS
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
METALS
MICROSCOPY
NONMETALS
OXIDATION
OXYGEN
OXYGEN IONS
PNICTIDES
SPATIAL DISTRIBUTION
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE