Direct evidence of Cr-structural defect-oxygen interaction in ion-implanted GaAs
Conference
·
OSTI ID:6069586
The redistribution of Cr in GaAs implanted with either Ga and As, or Ga, As and O and subsequently furnace annealed was studied by secondary ion mass spectrometry. The depth distribution of the residual damage was obtained by cross-sectional transmission electron microscopy. At annealing temperatures of less than or equal to 600/sup 0/, there was a one to one depth correlation between the positions of the damage layers and peaks in the atomic profile of Cr. However, at annealing temperatures of greater than or equal to 800/sup 0/C such correlations were complicated by oxidation effects.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6069586
- Report Number(s):
- LBL-13527; CONF-810994-1; ON: DE82002952
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
CHROMIUM IONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISTRIBUTION
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPLANTS
IMPURITIES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONS
MASS SPECTROSCOPY
MICROANALYSIS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
NONMETALS
OXYGEN
PNICTIDES
SPATIAL DISTRIBUTION
SPECTROSCOPY
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
CHROMIUM IONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISTRIBUTION
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPLANTS
IMPURITIES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONS
MASS SPECTROSCOPY
MICROANALYSIS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
NONMETALS
OXYGEN
PNICTIDES
SPATIAL DISTRIBUTION
SPECTROSCOPY