Electrical characterisation of magnesium and tellurium implanted indium gallium arsenide
- Univ. of Surrey, Guildford (United Kingdom); and others
There has been a great deal of interest in the Indium Gallium Arsenide (InGaAs) material system, both lattice matched to Indium Phosphide (InP) as well as material grown pseudomorphically on GaAs because of its importance to optoelectronic devices. In this paper we present some preliminary observations on the electrical properties of In{sub x}Ga{sub 1-x}As on Gallium Arsenide (GaAs) substrate implanted with magnesium with x varying between 0 to 60 atomic %. Our results indicate that p-type activity is difficult to realise in In{sub x}Ga{sub 1-x}As for x > 50%. We also report results of tellurium doubly charged implanted into In{sub 0.53}Ga{sub 0.47}As lattice matched to InP. About 600 angstroms of rf sputtered Aluminum Nitride (AIN) encapsulant was used to carry out 30s isochronal anneals in an optical furnace at temperatures of 600, 700 and 800{degrees}C. Differential Hall effect measurements were performed to provide dopant depth profiles. Good dopant activation and mobilities were obtained.
- OSTI ID:
- 621315
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Aluminum arsenide eutectic gallium arsenide solar cell
Indium tin oxide/gallium arsenide solar cells