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High-efficiency InP homojunction solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.91957· OSTI ID:5227817
Conversion efficiencies up to 15% (AM1) have been obtained for antireflection-coated InP homojunction solar cells, the highest efficiency values reported for InP cells of any type. The cells were fabricated on n/sup +/ p p/sup +/ structures formed by liquid phase epitaxy on single-crystal InP substrates. The cell photovoltaic characteristics are not very sensitive to n/sup +/-layer thickness, indicating that the surface recombination velocity is not as high as in homojunction GaAs solar cells. The performance of various antireflection coatings has been investigated.
Research Organization:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
OSTI ID:
5227817
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:4; ISSN APPLA
Country of Publication:
United States
Language:
English