High conversion efficiency p-n(+) InP homojunction solar cells

Journal Article · Fri Feb 01 04:00:00 EST 1985 · Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/EDL.1985.26049· OSTI ID:5701702

Shen, C C; Choi, K Y

p-n(+) InP homojunction solar cells have been fabricated and investigated. The best experimental cell without an antireflection coating exhibits a conversion efficiency of 13.5 percent (active area) under AM1 illumination the corresponding open-circuit voltage, short-circuit current density, and fill factor (F.F.) are 0.817 V, 21.0 mA/sq cm, and 0.787, respectively. 8 references.

• Research Organization: Arizona State Univ., Tempe
• OSTI ID: 5701702
• Journal Information: Electron Device Lett.; (United States), Journal Name: Electron Device Lett.; (United States) Vol. EDL-6; ISSN EDLED
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
BEAMS
COATINGS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRON BEAMS
EPITAXY
EQUIPMENT
HOMOJUNCTIONS
INDIUM PHOSPHIDE SOLAR CELLS
JUNCTIONS
LEPTON BEAMS
LIQUID PHASE EPITAXY
P-N JUNCTIONS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPECIFICATIONS