P/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy

Journal Article · Mon Feb 15 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339980· OSTI ID:5629347

Choi, K Y; Shen, C C

p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p/sup +/-In/sub 0.53/Ga/sub 0.47/As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0%. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/cm/sup 2/, and 81.0%, respectively.

• Research Organization: Center for Solid State Electronics Research and Department of Electrical and Computer Engineering, Arizona State University, Tempe, Arizona 85287
• OSTI ID: 5629347
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC POTENTIAL
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
INFORMATION
JUNCTIONS
LIQUID PHASE EPITAXY
NUMERICAL DATA
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT