Preparation and characterization of indium phosphide homojunction solar cells by liquid-phase epitaxy
P/N indium phosphide homojunction solar cells have been studied both theoretically and experimentally. A new contracting scheme for InP solar cells is developed to overcome the drawbacks of the conventional shallow-junction cells. In the modified structure, an InGaAs contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminate surface-spiking problems at the front surface. A simple analytical model is used to simulate the performance of the p/n InP homojunction solar cells. Optimum cell structure was investigated. The optimal-hole concentration in the emitter region should be larger than 2 x 10/sup 18/ cm/sup -3/, the optimal electron concentration in the base region is around 5 x 10/sup 17/ cm/sup -3/, and the optimal junction depth is 0.2 ..mu..m. The optimum antireflection coatings and patterns for the front grid contact are also investigated. Liquid-phase-epitaxy growth technique and wafer-processing procedures were established to fabricate p/n InP homojunction solar cells which consist of a new contacting scheme.
- Research Organization:
- Arizona State Univ., Tempe (USA)
- OSTI ID:
- 6300903
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sputtered oxide/indium phosphide junctions and indium phosphide surfaces
Heat-resisting and efficient indium oxide/indium phosphide heterojunction solar cells
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
COATINGS
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
HOMOJUNCTIONS
INDIUM PHOSPHIDE SOLAR CELLS
JUNCTIONS
LIQUID PHASE EPITAXY
MATHEMATICAL MODELS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT