Magnesium doping of efficient GaAs and Ga/sub 0. 75/In/sub 0. 25/As solar cells grown by metalorganic chemical vapor deposition

Journal Article · Mon Oct 15 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95405· OSTI ID:6151335

Lewis, C R; Ford, C W; Werthen, J G

Magnesium has been substituted for zinc in GaAs and Ga/sub 0.75/In/sub 0.25/As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp/sub 2/Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles and facilitate high-temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

• Research Organization: Varian Associates, Incorporated, Corporate Solid State Laboratory, Palo Alto, California 94303
• OSTI ID: 6151335
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
DEPOSITION
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
INDIUM ARSENIDES
INDIUM COMPOUNDS
OPERATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING