Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

Journal Article · Fri May 01 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3122522· OSTI ID:21356136

Jung, D W; Noh, J P; Otsuka, N ^[1]

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1. School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi, Ishikawa 923-1292 (Japan)

Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

• OSTI ID: 21356136
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKALINE EARTH METALS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELEMENTS
EMISSION
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPURITIES
LAYERS
LUMINESCENCE
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
SUPERLATTICES
THIN FILMS
VACANCIES