Photoluminescence of {delta}-doped ZnSe:(Te,N) grown by molecular beam epitaxy

Journal Article · Sat Sep 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1389483· OSTI ID:40277764

Kuskovsky, Igor L; Tian, C; Sudbrack, C; Neumark, G F; Lin, W -C; Guo, S P; Tamargo, M C

We have studied the low temperature photoluminescence (PL) of a {delta}-doped ZnSe:(Te,N) system using two different types of samples, one with single {delta} layers separated by undoped spacers and the other with three adjacent {delta} layers in each doping cycle. We have concluded that both Te and N participate in radiative recombination. We observe a relatively low PL efficiency (compared to samples without N) for these samples, and we suggest that Auger recombination is a likely mechanism, although a role of slow donor--acceptor pair PL and consequent nonradiative processes cannot be ruled out.

• Sponsoring Organization: (US)
• DOE Contract Number: FG02-98ER45694
• OSTI ID: 40277764
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EFFICIENCY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RECOMBINATION
SPACERS