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Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2184434· OSTI ID:20787983
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  1. Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)
We here report results of high resolution x-ray diffraction, x-ray reflectivity (XRR), as well as optical absorption and reflection measurements on ZnSe samples grown by molecular beam epitaxy, with insertion of planar ({delta}-) regions of both N as an acceptor dopant and Te as a 'co-dopant' to facilitate a p-type doping. We note that to enhance the surface diffusion of Te, migration enhanced epitaxy was adopted in the growth of the '{delta}-layers';' i.e., Te is deposited in the absence of Zn flux. Structural parameters were extracted by simulating the experimental x-ray diffraction curves using a dynamical model. The results show that only the '{delta}-layers' (with submonolayer thickness) are rich in ZnTe, while the nominally undoped 'spacers' have only a low Te concentration. Moreover, the morphology of the surface and interfaces are studied by XRR. Furthermore, the optical absorption and reflection results show that our samples largely preserve the optical properties of the host material (ZnSe). We note that our results, in particular those on the Te concentration, explain the observed good p-type doping of such samples.
OSTI ID:
20787983
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English