Mechanism for Increasing Dopant Incorporation in Semiconductors Via Doped Nanostructures

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Phys. Rev. B

DOI:https://doi.org/10.1103/PhysRevB.73.195306· OSTI ID:914224

Kuskovsky, I; Gu, Y; Gong, Y; Yan, H; Lau, J; Noyan, I; Neumark, G; Maksimov, O; Zhou, X

A long-standing problem for ZnSe (and related alloys) has been to obtain good p-type doping. Recent work has given about an order-of-magnitude improvement in such doping by use of Te as a 'codopant' to facilitate the introduction of an acceptor dopant (N), since it is known that p-ZnTe can be obtained quite readily; the Te was introduced in submonolayer quantities via planar ({delta}) doping during molecular beam epitaxy. Here, we examine the mechanism of this improved doping. We show that it resides in the formation of ZnTe-rich nanoislands, with the N embedded in these. This result is obtained by studies involving transmission electron microscopy, high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and temperature quenching of photoluminescence. We note that these nanoislands appear quite unique, in providing doping of semiconductors, and thus are of great interest of their own.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 914224
• Report Number(s): BNL--78792-2007-JA
• Journal Information: Phys. Rev. B, Journal Name: Phys. Rev. B Vol. 73; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
DOPED MATERIALS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
QUENCHING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
national synchrotron light source