Improvement of hot-carrier and radiation hardnesses in metal-oxide-nitride-oxide semiconductor devices by irradiation-then-anneal treatments

Journal Article · Fri Apr 01 00:00:00 EST 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.278518· OSTI ID:7027230

Chang-Liao, K S ^[1]; Hwu, J G ^[2]

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1. National Tsing Hua Univ., Hsinchu (Taiwan, Province of China). Dept. of Nuclear Engineering
2. National Taiwan Univ., Taipei (Taiwan, Province of China). Dept. of Electrical Engineering

The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO[sub 2]) and an anneal in N[sub 2] at 400 C for 10 min successively. This improvement can be explained by the release of SiO[sub 2]/Si interfacial strain.

• OSTI ID: 7027230
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:4; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR DEVICES
RADIATION HARDENING
ANNEALING
CHARGE CARRIERS
COBALT 60
IRRADIATION
PHYSICAL RADIATION EFFECTS
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
HARDENING
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
RADIATION EFFECTS
RADIOISOTOPES
YEARS LIVING RADIOISOT
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems