Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides

Journal Article · Wed Sep 01 00:00:00 EDT 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6246402

Lu, Weishin; Lin, Kuanchin; Hwu, Jenngwo ^[1]

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1. National Taiwan Univ., Taipei (Taiwan, Province of China). Dept of Electrical Engineering

The radiation hardness of MOS capacitors with various reoxidized nitrided oxide (RNO) structures is studied by changing the durations of rapid thermal processes during sample preparation and by applying irradiation-then-anneal (ITA) treatments on samples after preparation. It is found that the initial flatband voltage and midgap interface trap density of MOS capacitors exhibit turnaround'' dependency on the total time of nitridation and reoxidation processes. For samples with nitrided oxide (NO) structures, the radiation-induced variations of above parameters are also turnaround''-dependent on nitridation time. However, when the reoxidation process is performed, the radiation hardness for all samples will be gradually improved with increasing reoxidation time no matter what the nitridation time is. The most radiation-hard process for RNO structures is suggested. Finally, it is found that when ITA treatments are applied on samples after preparation, their radiation hardness is much improved.

• OSTI ID: 6246402
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:9; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CAPACITORS
CHALCOGENIDES
DATA
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
EXPERIMENTAL DATA
GATING CIRCUITS
HARDENING
HEAT TREATMENTS
INFORMATION
IRRADIATION
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES